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1. general description the SA58672 is a mono, ?lter-free class-d audio ampli?er which is available in a 9 bump wlcsp (wafer level chip-size package) and 10-terminal hvson packages. the SA58672 features shutdown control. improved immunity to noise and rf recti?cation is increased by high psrr and differential circuit topology. fast start-up time and very small wlcsp package makes it an ideal choice for bot cellular handsets and pdas. the SA58672 delivers 1.7 w at 5 v and 800 mw at 3.6 v into 8 w . it delivers 3.0 w at 5 v and 1.6 w at 3.6 v into 4 w . the maximum power ef?ciency is excellent at 90 % into 8 w and 84 % to 88 % into 4 w . the SA58672 provides thermal and short-circuit shutdown protection. 2. features n output power u 3.0 w into 4 w at 5 v u 1.6 w into 4 w at 3.6 v u 1.7 w into 8 w at 5 v u 800 mw into 8 w at 3.6 v n power supply range: 2.0 v to 5.5 v n shutdown control n high svrr: - 77 db at 217 hz n fast start-up time: 7.0 ms n low supply current n low shutdown current n short-circuit and thermal protection n space savings with 1.66 mm 1.71 mm 0.6 mm 9 bump wlcsp package n low junction to ambient thermal resistance of 100 k/w with adequate heat sinking of wlcsp n enhanced power dissipation with 3.0 mm 3.0 mm 0.85 mm hvson10 package SA58672 3.0 w mono class-d audio ampli?er rev. 02 23 february 2009 product data sheet
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 2 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er 3. applications n wireless and cellular handsets and pdas n portable dvd player n usb speakers n notebook pc n portable radio and gaming n educational toys 4. ordering information 5. block diagram table 1. ordering information type number package name description version SA58672tk hvson10 plastic thermal enhanced very thin small outline package; no leads; 10 terminals; body 3 3 0.85 mm sot650-1 SA58672uk wlcsp9 wafer level chip-size package; 9 bumps; 1.66 1.71 0.6 mm SA58672uk fig 1. block diagram 002aad820 bypass bypass r f r f outp outm r l = 8 w shutdown control sd agnd, pgnd 300 k w c s pvdd, avdd v p bypass internal biasing inp inm r i r i battery positive differential input negative differential input v ih v il h-bridge pwm internal oscillator
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 3 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er 6. pinning information 6.1 pinning fig 2. pin con?guration for wlcsp9 fig 3. ball mapping for wlcsp9 (1) exposed die attach paddle (dap). fig 4. pin con?guration for hvson10 a b c 123 001aai332 SA58672uk transparent top view bump a1 index area inp agnd outm 123 avdd pvdd pgnd a b inm sd outp c 002aad854 transparent top view 002aad822 SA58672tk n.c. inp agnd outm inm pgnd avdd pvdd sd outp transparent top view 5 6 4 7 3 8 2 9 1 10 terminal 1 index area dap (1)
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 4 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er 6.2 pin description 7. limiting values table 2. pin description symbol pin description wlcsp9 hvson10 inp a1 4 channel positive input avdd b1 2 analog supply voltage (level same as pvdd) inm c1 3 channel negative input agnd a2 5 analog ground pvdd b2 9 power supply voltage (level same as avdd) sd c2 1 channel shutdown input (active low) outm a3 7 channel negative output pgnd b3 8 power ground outp c3 10 channel positive output n.c. - 6 not connected dap - (dap) exposed die attach paddle; connect to ground plane heat spreader table 3. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v dd supply voltage active mode - 0.3 +6.0 v shutdown mode - 0.3 +7.0 v v i input voltage pin sd gnd v dd v other pins - 0.3 v dd + 0.3 v p power dissipation wlcsp9; derating factor 10 mw/k t amb =25 c - 1250 mw t amb =75 c - 750 mw t amb =85 c - 650 mw hvson10; derating factor 20 mw/k t amb =25 c - 3.12 mw t amb =75 c - 1.87 mw t amb =85 c - 1.62 mw t amb ambient temperature operating in free air - 40 +85 c t j junction temperature operating - 40 +150 c t stg storage temperature - 65 +150 c v esd electrostatic discharge voltage human body model 2000 - v machine model 200 - v
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 5 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er 8. static characteristics [1] v dd is the supply voltage on pin pvdd and pin avdd. gnd is the ground supply voltage on pin pgnd and pin agnd. table 4. static characteristics t amb =25 c, unless otherwise speci?ed [1] . symbol parameter conditions min typ max unit v dd supply voltage 2.0 - 5.5 v | v o(offset) | output offset voltage measured differentially; inputs ac grounded; g v = 6 db; v dd = 2.0 v to 5.5 v - 5 25 mv psrr power supply rejection ratio v dd = 2.0 v to 5.5 v - - 93 - 70 db v i(cm) common-mode input voltage v dd = 2.0 v to 5.5 v 0.5 - v dd - 0.8 v cmrr common mode rejection ratio inputs are shorted together; v dd = 2.0 v to 5.5 v - - 69 - 50 db i ih high-level input current v dd = 5.5 v; v i =v dd --50 m a i il low-level input current v dd = 5.5 v; v i =0v - - 5 m a i dd supply current v dd = 5.5 v; no load - 3.4 4.2 ma v dd = 5.0 v; no load 3.2 4.0 ma v dd = 3.6 v; no load - 2.6 3.4 ma v dd = 2.5 v; no load - 2.2 3.0 ma i dd(sd) shutdown mode supply current no input signal; v sd = gnd - 10 1000 na v sd voltage on pin sd device on 1.3 - v dd v device off gnd - 0.35 v z i input impedance v dd = 2.0 v to 5.5 v 260 300 340 k w r dson drain-source on-state resistance static; v dd = 5.5 v - 430 - m w static; v dd = 3.6 v - 475 - m w static; v dd = 2.5 v - 550 - m w z o(sd) shutdown mode output impedance v sd = 0.35 v - 2 - k w f sw switching frequency v dd = 2.5 v to 5.5 v 250 300 350 khz g v(cl) closed-loop voltage gain v dd = 2.0 v to 5.5 v; r i in k w 260 k w /r i 300 k w /r i 340 k w /r i v/v
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 6 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er 9. dynamic characteristics [1] v dd is the supply voltage on pins pvdd and pin avdd. table 5. dynamic characteristics t amb =25 c; r l =8 w ; unless otherwise speci?ed [1] . symbol parameter conditions min typ max unit p o output power f = 1 khz; thd+n = 10 % r l =8 w ; v dd = 5.0 v - 1.7 - w r l =8 w ; v dd = 3.6 v - 800 - mw r l =4 w ; v dd = 5.0 v - 3.0 - w r l =4 w ; v dd = 3.6 v - 1.6 - w f = 1 khz; thd+n = 1 % r l =8 w ; v dd = 5.0 v - 1.6 - w r l =8 w ; v dd = 3.6 v - 0.75 - w r l =4 w ; v dd = 5.0 v - 2.4 - w r l =4 w ; v dd = 3.6 v - 1.2 - w thd+n total harmonic distortion-plus-noise v dd =5v; g v = 6 db; r l =8 w ; f = 1 khz; p o =1w - 0.08 - % v dd =3v; r l =3 w ; p o =1w-3-% h po output power ef?ciency p o(rms) = 2.0 w; r l =4 w -85-% p o(rms) = 1.3 w; r l =8 w -90-% svrr supply voltage ripple rejection g v = 6 db; f = 217 hz v dd = 5.0 v - - 77 - db v dd = 3.6 v - - 73 - db cmrr common mode rejection ratio v dd =5v; g v = 6 db; f = 217 hz - - 69 - db t d(sd-startup) delay time from shutdown to start-up v dd = 3.6 v - 7.0 - ms v n(o) output noise voltage v dd = 3.6 v; f = 20 hz to 20 khz; inputs are ac grounded no weighting - 35 - m v a weighting - 27 - m v
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 7 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er 10. typical characterization curves a. r l =2 15 m h + 4.11 w b. r l =2 15 m h + 8.03 w (1) v dd = 5.0 v. (2) v dd = 3.6 v. (3) v dd = 2.5 v. fig 5. output power ef?ciency as a function of output power 40 60 20 80 100 h po 0 002aad856 p o (w) 0 3.0 2.0 1.0 0.5 1.5 2.5 (1) (2) (3) 40 60 20 80 100 0 p o (w) 0 2.0 1.5 0.5 1.0 002aad857 h po (1) (2) (3) a. v dd = 5.0 v b. v dd = 3.6 v (1) r l =2 15 m h + 4.11 w . (2) r l =2 15 m h + 8.03 w . fig 6. power dissipation as a function of output power 002aad858 p o (w) 0 3.0 2.0 1.0 0.2 0.3 0.1 0.4 0.5 p (w) 0 (1) (2) (1) 0.1 0.2 0.3 p (w) 0 p o (w) 0 2.0 1.5 0.5 1.0 002aad859 (2)
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 8 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er a. r l =2 15 m h + 8.03 w b. r l =2 15 m h + 4.11 w (1) v dd = 5.0 v. (2) v dd = 3.6 v. (3) v dd = 2.5 v. fig 7. supply current as a function of output power 0 300 200 100 400 i dd (ma) p o (w) 0 2.0 1.5 0.5 1.0 002aad860 (1) (2) (3) 002aad861 p o (w) 03 2 1 0 600 400 200 800 i dd (ma) (1) (2) (3) (1) with ferrite bead + 1 nf capacitor on outputs; r l =2 15 m h + 8.03 w . (2) without ferrite beads + 1 nf capacitor on outputs; r l =2 15 m h + 8.03 w or no load. (1) v dd = 5.0 v. (2) v dd = 3.6 v. (3) v dd = 2.5 v. fig 8. supply current as a function of supply voltage fig 9. shutdown mode supply current as a function of shutdown voltage 002aad862 v dd (v) 2.5 5.5 4.5 3.5 0 6 4 2 8 i dd (ma) (1) (2) 0 6 4 2 8 i dd(sd) ( m a) v sd (v) 0 2.0 1.5 0.5 1.0 002aad863 (1) (2) (3)
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 9 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er a. r l =2 15 m h+4 w ; a-weighting thd+n ?lter b. r l =2 15 m h+8 w ; a-weighting thd+n ?lter (1) v dd = 2.5 v. (2) v dd = 3.6 v. (3) v dd = 5.0 v. (4) v dd = 5.5 v. fig 10. total harmonic distortion-plus-noise as a function of output power 002aad864 p o (w) 10 - 1 10 1 10 - 1 1 10 10 2 thd+n (%) 10 - 2 (1) (2) (3) (4) 002aad865 p o (w) 10 - 2 10 1 10 - 1 10 - 1 1 10 10 2 thd+n (%) 10 - 2 (1) (3) (4) (2)
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 10 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er (1) v o = 4 dbv. (2) v o = 3.5 dbv. (3) v o = 0 dbv. (4) v o = - 10 dbv. (1) v o = 8 dbv. (2) v o = 7 dbv. (3) v o = 5 dbv. (4) v o = 0 dbv. (5) v o = - 10 dbv. a. v dd = 2.5 v b. v dd = 3.6 v (1) v o = 11 dbv. (2) v o = 10 dbv. (3) v o = 8 dbv. (4) v o = 0 dbv. (5) v o = - 10 dbv. c. v dd = 5.0 v fig 11. total harmonic distortion-plus-noise as a function of frequency; r l =2 15 m h+4 w ; g v = 6 db; a-weighting thd+n ?lter 002aad869 f (hz) 10 10 5 10 4 10 2 10 3 10 - 2 10 - 1 1 10 thd+n (%) 10 - 3 (1) (2) (3) (4) 002aad870 f (hz) 10 10 5 10 4 10 2 10 3 10 - 2 10 - 1 1 10 thd+n (%) 10 - 3 (1) (2) (3) (4) (5) 002aad871 f (hz) 10 10 5 10 4 10 2 10 3 10 - 2 10 - 1 1 10 thd+n (%) 10 - 3 (1) (2) (3) (4) (5)
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 11 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er a. f i = 1 khz b. f i = 3 khz c. f i = 5 khz fig 12. fft spectrum as a function of frequency; v dd = 3.6 v; v o = 6 dbv; r l =2 15 m h+4 w - 100 - 40 +20 fft (db) - 160 f (khz) 024 16 8 002aad866 - 100 - 40 +20 fft (db) - 160 f (khz) 024 16 8 002aad867 - 100 - 40 +20 fft (db) - 160 f (khz) 024 16 8 002aad868
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 12 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er a. r l =2 15 m h + 4.11 w ; inputs ac grounded; c i =1 m f b. r l =2 15 m h + 8.03 w ; inputs ac grounded; c i =1 m f c. r l =2 15 m h + 8.03 w ; inputs ?oating (1) v dd = 5.0 v. (2) v dd = 3.6 v. (3) v dd = 2.5 v. fig 13. supply voltage ripple rejection as a function of frequency; g v(cl) = 2 v/v 002aad873 f (hz) 10 10 5 10 4 10 2 10 3 - 90 - 70 - 50 svrr (db) - 110 (1) (2) (3) 002aad874 f (hz) 10 10 5 10 4 10 2 10 3 - 90 - 70 - 50 svrr (db) - 110 (1) (2) (3) 002aad875 f (hz) 10 10 5 10 4 10 2 10 3 - 90 - 70 - 50 svrr (db) - 110 (1) (2) (3)
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 13 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er 11. application information 11.1 power supply decoupling considerations the SA58672 is a mono class-d audio ampli?er that requires proper power supply decoupling to ensure the rated performance for thd+n and power ef?ciency. to decouple high frequency transients, power supply spikes and digital noise on the power bus line, a low equivalent series resistance (esr) capacitor, of typically 1 m f is placed as close as possible to the pvdd terminals of the device. it is important to place the decoupling capacitor at the power pins of the device because any resistance or inductance in the pcb trace between the device and the capacitor can cause a loss in ef?ciency. additional decoupling using a larger capacitor, 4.7 m f or greater may be done on the power supply connection on the pcb to ?lter low frequency signals. usually this is not required due to high psrr of the device. 11.2 voltage gain the SA58672 is comprised of an analog ampli?er stage and a comparator stage. the output of the analog ampli?er stage is compared with the periodic ramp signal from the sawtooth ramp generator. the resulting output of the comparator is a pulse width modulated (pwm) signal. the ?nal stage is a power nmos and pmos h-bridge that converts the pwm into a high power output signal capable of driving low-impedance loads. the input resistor, r i sets the gain of the ampli?er according to equation 1 : (1) 11.3 input capacitor selection the SA58672 does not require input coupling capacitors when used with a differential audio source that is biased from 0.5 v to v dd - 0.8 v. in other words, the input signal must be biased within the common-mode input voltage range. if high-pass ?ltering is required or if it is driven using a single-ended source, input coupling capacitors are required. the 3 db cut-off frequency created by the input coupling capacitor and the input resistors is calculated by equation 2 : (2) using an input resistor of 150 k w , the gain is set to 2 v/v. at this gain setting, for input capacitor values from 220 nf to 2.2 m f, the 3 db cut-off frequency may be set between 22 hz and 220 hz. since the values of the input coupling capacitor and the input resistor affects the low frequency performance of the audio ampli?er, it is important to consider in the system design. small speakers in wireless and cellular phones usually do not respond well to low frequency signals. their low frequency response may be only 600 hz; typically 1 khz. thus, the 3 db cut-off frequency should be increased to block the low frequency signals to the speakers. gain 2 150 k w () r i -------------------------- - = f 3db C 1 2 p r i c i ----------------------------- - =
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 14 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er for a required 3 db cut-off frequency, equation 3 is used to determine c i : (3) the input signal may be dc-coupled, but not using input coupling capacitors may increase the output offset voltage. 11.4 pcb layout considerations the component location is very important for performance of the SA58672. place all external components very close to the device. placing decoupling capacitors directly at the power supply pins increases ef?ciency because the resistance and inductance in the trace between the device power supply pins and the decoupling capacitor causes a loss in power ef?ciency. the trace width and routing are also very important for power output and noise considerations. for high current terminals (pvdd, pgnd and audio output), the trace widths should be maximized to ensure proper performance and output power. use at least 500 m m wide traces. for the input pins (inp, inm), the traces must be symmetrical and run side-by-side to maximize common-mode cancellation. 11.5 evaluation demo board the SA58672 evaluation demo board schematic is shown in figure 14 . an evaluation demo board is available and it may be used for either differential or single-ended (se) input con?guration. a component position on the pcb is provided to ac ground one of the inputs using a 0 w chip resistor. when driving se, the undriven input must be at the same dc level as driven input. if the input is driven from an ipod or mp3 player, the undriven input is ac grounded; however, if driven from a codec, the undriven input is ac decoupled to the same level as the codec output. usually, a v ref is provided on the codec. c i 1 2 p r i f 3db C -------------------------------------- =
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 15 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er 11.6 filter-free operation and ferrite bead ?lters a ferrite bead low-pass ?lter can be used to reduce radio frequency emissions in applications that have circuits sensitive to greater than 1 mhz. a ferrite bead low-pass ?lter functions well for ampli?ers that must pass fcc unintentional radiation requirements at greater than 30 mhz. choose a bead with high-impedance at high frequencies and very low-impedance at low frequencies. in order to prevent distortion of the output signal, select a ferrite bead with adequate current rating. ferrite bead sources are: ? tdk mpz1608s221a: 220 w at 100 mhz; 3 a peak max current; 0.04 w dc resistance. ? koa czp2afttd221p: 220 w at 100 mhz; 2 a peak max current; 0.05 w dc resistance. ? murata blm21pg221sn1: 220 w at 100 mhz; 2 a peak max current; 0.05 w dc resistance. the dc resistance should be as low as possible and the maximum current must exceed at least 1 a. impedance of 220 w at 100 mhz is common spec, but 600 w and 1 k w ferrite beads may be used. generally, the current rating decreases with increasing impedance at 100 mhz. however, larger impedance at 100 mhz allows for a smaller, shunt capacitor that will reduce the quiescent load current; this is important for battery operated applications. r3 and r4 are not populated for differential input drive. for single-ended input drive, either r3 or r4 are shorted to ground using a 0 w resistor (i.e., one input is ac grounded and the other is driven with the input signal). fig 14. SA58672 evaluation demo board schematic sd 002aad872 avdd inm agnd inp hvson10 (3 mm 3 mm) SA58672 1 2 3 4 5 10 9 8 7 6 outp pvdd pgnd outm n.c. c1 1 m f fb1 2 a - 220 w fb2 2 a - 220 w gnd c4 1 nf c5 1 nf gnd gnd outp outp outm outm c6 1 m f gnd c7 10 m f pvdd r2 r1 c3 1 m f c2 1 m f inm inp gnd gnd r4 r3 gnd 1 2 3 1 2 3 gnd gnd sd pvdd sv1 sv2 ext_avdd ext_avdd avdd pvdd c8 10 m f gnd9 gnd6 gnd gnd
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 16 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er for applications in which there are circuits that are emi sensitive to low frequency (< 1 mhz) and there are long leads from ampli?er to speaker, it may be necessary to use an lc output ?lter. 11.7 ef?ciency and thermal considerations the maximum ambient operating temperature depends on the heat transferring ability of the heat spreader on the pcb layout. in t ab le 3 limiting v alues , power dissipation, the power derating factor is given as 10 mw/k. the device thermal resistance, r th(j-a) is the reciprocal of the power derating factor. convert the power derating factor to r th(j-a) by equation 4 : (4) for a maximum allowable junction temperature, t j = 150 c and r th(j-a) = 100 k/w and a maximum device dissipation of 0.84 w (420 mw per channel) and for 1.7 w per channel output power, 4 w load, 5 v supply, the maximum ambient temperature is calculated using equation 5 : (5) the maximum ambient temperature is 66 c at maximum power dissipation for 5 v supply and 4 w load. if the junction temperature of the SA58672 rises above 150 c, the thermal protection circuitry turns the device off; this prevents damage to the ic. using speakers greater than 4 w further enhances thermal performance and battery lifetime by reducing the output load current and increasing ampli?er ef?ciency. 11.8 additional thermal information the SA58672 9 bump wlcsp package ground bumps are soldered directly to the pcb heat spreader. by the use of thermal vias, the bumps may be soldered directly to a ground plane or special heat sinking layer designed into the pcb. the thickness and area of the heat spreader may be maximized to optimize heat transfer and achieve lower package thermal resistance. the SA58672 hvson10 package has an exposed die attach paddle (dap), which is soldered directly to the pcb heat spreader to provide enhanced heat transfer and achieve lowest package thermal resistance. r th j - a () 1 derating factor ----------------------------------------- - 1 0.01 ---------- 100 k / w === t amb max () t j max () r th j - a () p max () C 150 100 0.84 () C 66 c ===
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 17 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er 12. test information 12.1 test setup for typical characterization curves the SA58672 demo board shown in figure 14 and the apa (audio precision analyzer) are used to provide the characterization curves. the test setup diagram in figure 15 shows the setup details. the output load con?guration is comprised of 2 15 m h power inductors and precision power load resistor. this passive load emulates a small, low power speaker; it facilitates ef?ciency measurements. a speaker may be substituted for the passive load to yield similar results. (1) dut is the SA58672 evaluation demo board. fig 15. SA58672 test setup block diagram 002aad855 power supply + - inp inm outp outm 15 m h 15 m h dut r l aux0025 30 khz low-pass filter ap585 measurement inputs ap585 audio analyzer
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 18 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er 13. package outline fig 16. package outline sot650-1 (hvson10) 0.5 0.2 1 0.05 0.00 a 1 e h b unit d (1) y e 2 e 1 references outline version european projection issue date iec jedec jeita mm 3.1 2.9 cd h 1.75 1.45 y 1 3.1 2.9 2.55 2.15 0.30 0.18 0.05 0.1 dimensions (mm are the original dimensions) sot650-1 mo-229 - - - - - - e (1) 0.55 0.30 l 0.1 v 0.05 w 0 2 mm 1 scale sot650-1 hvson10: plastic thermal enhanced very thin small outline package; no leads; 10 terminals; body 3 x 3 x 0.85 mm a (1) max. a a 1 c detail x y d h e h e l 10 5 1 6 d e y 1 c c b a 01-01-22 02-02-08 terminal 1 index area terminal 1 index area x e 1 b a c c b v m w m note 1. plastic or metal protrusions of 0.075 mm maximum per side are not included.
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 19 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er fig 17. package outline wlcsp9 references outline version european projection issue date iec jedec jeita SA58672uk SA58672uk 08-06-12 unit a max mm 0.64 0.26 0.22 0.38 0.34 1.69 1.63 1.74 1.68 0.5 1 0.15 0.05 a 1 dimensions (mm are the original dimensions) wlcsp9: wafer level chip-size package; 9 bumps; 1.66 x 1.71 x 0.6 mm a 2 b 0.34 0.30 d e e e 1 e 2 1 v w y 0.08 scale 2 mm 1 0 a b c 13 2 e 2 e b e 1 e a c b ? v m c ? w m bump a1 index area a b d e bump a1 index area x c y detail x a a 2 a 1
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 20 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er 14. soldering of smd packages this text provides a very brief insight into a complex technology. a more in-depth account of soldering ics can be found in application note an10365 surface mount re?ow soldering description . 14.1 introduction to soldering soldering is one of the most common methods through which packages are attached to printed circuit boards (pcbs), to form electrical circuits. the soldered joint provides both the mechanical and the electrical connection. there is no single soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mount devices (smds) are mixed on one printed wiring board; however, it is not suitable for ?ne pitch smds. re?ow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 14.2 wave and re?ow soldering wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. the wave soldering process is suitable for the following: ? through-hole components ? leaded or leadless smds, which are glued to the surface of the printed circuit board not all smds can be wave soldered. packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. also, leaded smds with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. the re?ow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature pro?le. leaded packages, packages with solder balls, and leadless packages are all re?ow solderable. key characteristics in both wave and re?ow soldering are: ? board speci?cations, including the board ?nish, solder masks and vias ? package footprints, including solder thieves and orientation ? the moisture sensitivity level of the packages ? package placement ? inspection and repair ? lead-free soldering versus snpb soldering 14.3 wave soldering key characteristics in wave soldering are: ? process issues, such as application of adhesive and ?ux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave ? solder bath speci?cations, including temperature and impurities
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 21 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er 14.4 re?ow soldering key characteristics in re?ow soldering are: ? lead-free versus snpb soldering; note that a lead-free re?ow process usually leads to higher minimum peak temperatures (see figure 18 ) than a snpb process, thus reducing the process window ? solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board ? re?ow temperature pro?le; this pro?le includes preheat, re?ow (in which the board is heated to the peak temperature) and cooling down. it is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). in addition, the peak temperature must be low enough that the packages and/or boards are not damaged. the peak temperature of the package depends on package thickness and volume and is classi?ed in accordance with t ab le 6 and 7 moisture sensitivity precautions, as indicated on the packing, must be respected at all times. studies have shown that small packages reach higher temperatures during re?ow soldering, see figure 18 . table 6. snpb eutectic process (from j-std-020c) package thickness (mm) package re?ow temperature ( c) volume (mm 3 ) < 350 3 350 < 2.5 235 220 3 2.5 220 220 table 7. lead-free process (from j-std-020c) package thickness (mm) package re?ow temperature ( c) volume (mm 3 ) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 22 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er for further information on temperature pro?les, refer to application note an10365 surface mount re?ow soldering description . 15. soldering of wlcsp packages 15.1 introduction to soldering wlcsp packages this text provides a very brief insight into a complex technology. a more in-depth account of soldering wlcsp (wafer level chip-size packages) can be found in application note an10439 wafer level chip scale package and in application note an10365 surface mount re?ow soldering description . wave soldering is not suitable for this package. all nxp wlcsp packages are lead-free. 15.2 board mounting board mounting of a wlcsp requires several steps: 1. solder paste printing on the pcb 2. component placement with a pick and place machine 3. the re?ow soldering itself 15.3 re?ow soldering key characteristics in re?ow soldering are: ? lead-free versus snpb soldering; note that a lead-free re?ow process usually leads to higher minimum peak temperatures (see figure 19 ) than a pbsn process, thus reducing the process window msl: moisture sensitivity level fig 18. temperature pro?les for large and small components 001aac844 temperature time minimum peak temperature = minimum soldering temperature maximum peak temperature = msl limit, damage level peak temperature
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 23 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er ? solder paste printing issues, such as smearing, release, and adjusting the process window for a mix of large and small components on one board ? re?ow temperature pro?le; this pro?le includes preheat, re?ow (in which the board is heated to the peak temperature), and cooling down. it is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic) while being low enough that the packages and/or boards are not damaged. the peak temperature of the package depends on package thickness and volume and is classi?ed in accordance with t ab le 8 . moisture sensitivity precautions, as indicated on the packing, must be respected at all times. studies have shown that small packages reach higher temperatures during re?ow soldering, see figure 19 . for further information on temperature pro?les, refer to application note an10365 surface mount re?ow soldering description . 15.3.1 stand off the stand off between the substrate and the chip is determined by: ? the amount of printed solder on the substrate ? the size of the solder land on the substrate table 8. lead-free process (from j-std-020c) package thickness (mm) package re?ow temperature ( c) volume (mm 3 ) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245 msl: moisture sensitivity level fig 19. temperature pro?les for large and small components 001aac844 temperature time minimum peak temperature = minimum soldering temperature maximum peak temperature = msl limit, damage level peak temperature
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 24 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er ? the bump height on the chip the higher the stand off, the better the stresses are released due to tec (thermal expansion coef?cient) differences between substrate and chip. 15.3.2 quality of solder joint a ?ip-chip joint is considered to be a good joint when the entire solder land has been wetted by the solder from the bump. the surface of the joint should be smooth and the shape symmetrical. the soldered joints on a chip should be uniform. voids in the bumps after re?ow can occur during the re?ow process in bumps with high ratio of bump diameter to bump height, i.e. low bumps with large diameter. no failures have been found to be related to these voids. solder joint inspection after re?ow can be done with x-ray to monitor defects such as bridging, open circuits and voids. 15.3.3 rework in general, rework is not recommended. by rework we mean the process of removing the chip from the substrate and replacing it with a new chip. if a chip is removed from the substrate, most solder balls of the chip will be damaged. in that case it is recommended not to re-use the chip again. device removal can be done when the substrate is heated until it is certain that all solder joints are molten. the chip can then be carefully removed from the substrate without damaging the tracks and solder lands on the substrate. removing the device must be done using plastic tweezers, because metal tweezers can damage the silicon. the surface of the substrate should be carefully cleaned and all solder and ?ux residues and/or under?ll removed. when a new chip is placed on the substrate, use the ?ux process instead of solder on the solder lands. apply ?ux on the bumps at the chip side as well as on the solder pads on the substrate. place and align the new chip while viewing with a microscope. to re?ow the solder, use the solder pro?le shown in application note an10365 surface mount re?ow soldering description . 15.3.4 cleaning cleaning can be done after re?ow soldering. 16. abbreviations table 9. abbreviations acronym description apa audio precision analyzer codec compressor-decompressor dap die attach paddle dut device under test dvd digital video disc emi electromagnetic interference esr equivalent series resistance fcc federal communications commission fft fast fourier transform ic integrated circuit
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 25 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er 17. revision history lc inductor-capacitor ?lter lsb least signi?cant bit mp3 mpeg-1 audio layer 3 msb most signi?cant bit pc personal computer pcb printed-circuit board pda personal digital assistant psrr power supply rejection ratio pwm pulse width modulator rf radio frequency usb universal serial bus wlcsp wafer level chip-size package table 9. abbreviations continued acronym description table 10. revision history document id release date data sheet status change notice supersedes SA58672_2 20090223 product data sheet - SA58672_1 modi?cations: ? section 2 f eatures , 2nd bullet item: changed from power supply range: 2.5 v to 5.5 v to power supply range: 2.0 v to 5.5 v ? t ab le 4 static char acter istics : C v dd : min value changed from 2.5 v to 2.0 v C | v o(offset) | conditions: changed from v dd = 2.5 v to 5.5 v to v dd = 2.0 v to 5.5 v C psrr conditions: changed from v dd = 2.5 v to 5.5 v to v dd = 2.0 v to 5.5 v C v i(cm) conditions: changed from v dd = 2.5 v to 5.5 v to v dd = 2.0 v to 5.5 v C cmrr conditions: changed from v dd = 2.5 v to 5.5 v to v dd = 2.0 v to 5.5 v C z i conditions: changed from v dd = 2.5 v to 5.5 v to v dd = 2.0 v to 5.5 v C g v(cl) conditions: changed from v dd = 2.5 v to 5.5 v to v dd = 2.0 v to 5.5 v ? t ab le 5 dynamic char acter istics , symbol thd+n: added condition v dd =3v; r l =3 w ; p o = 1 w (typ value = 3 %) SA58672_1 20080710 product data sheet - -
SA58672_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 23 february 2009 26 of 27 nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er 18. legal information 18.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 18.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 18.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 18.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 19. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors SA58672 3.0 w mono class-d audio ampli?er ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 23 february 2009 document identifier: SA58672_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 20. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 static characteristics. . . . . . . . . . . . . . . . . . . . . 5 9 dynamic characteristics . . . . . . . . . . . . . . . . . . 6 10 typical characterization curves . . . . . . . . . . . . 7 11 application information. . . . . . . . . . . . . . . . . . 13 11.1 power supply decoupling considerations . . . . 13 11.2 voltage gain . . . . . . . . . . . . . . . . . . . . . . . . . . 13 11.3 input capacitor selection . . . . . . . . . . . . . . . . . 13 11.4 pcb layout considerations . . . . . . . . . . . . . . . 14 11.5 evaluation demo board. . . . . . . . . . . . . . . . . . 14 11.6 filter-free operation and ferrite bead ?lters. . . 15 11.7 ef?ciency and thermal considerations . . . . . . 16 11.8 additional thermal information . . . . . . . . . . . . 16 12 test information . . . . . . . . . . . . . . . . . . . . . . . . 17 12.1 test setup for typical characterization curves . 17 13 package outline . . . . . . . . . . . . . . . . . . . . . . . . 18 14 soldering of smd packages . . . . . . . . . . . . . . 20 14.1 introduction to soldering . . . . . . . . . . . . . . . . . 20 14.2 wave and re?ow soldering . . . . . . . . . . . . . . . 20 14.3 wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 20 14.4 re?ow soldering . . . . . . . . . . . . . . . . . . . . . . . 21 15 soldering of wlcsp packages. . . . . . . . . . . . 22 15.1 introduction to soldering wlcsp packages . . 22 15.2 board mounting . . . . . . . . . . . . . . . . . . . . . . . 22 15.3 re?ow soldering . . . . . . . . . . . . . . . . . . . . . . . 22 15.3.1 stand off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 15.3.2 quality of solder joint . . . . . . . . . . . . . . . . . . . 24 15.3.3 rework . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 15.3.4 cleaning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 16 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 24 17 revision history . . . . . . . . . . . . . . . . . . . . . . . . 25 18 legal information. . . . . . . . . . . . . . . . . . . . . . . 26 18.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 26 18.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 18.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 18.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 19 contact information . . . . . . . . . . . . . . . . . . . . 26 20 contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

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